1 dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 4 - pin configuration circuit pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 sop-8(top view) ELM34810AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 7 a ta=70c 6 pulsed drain current idm 40 a 3 power dissipation ta=25c pd 2.0 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34810AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=30v ? id=7a ? rds(on) < 21m (vgs=10v) ? rds(on) < 35m (vgs=4.5v)
2 note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. ta=25 c dual n-channel mosfet 4 - ELM34810AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs= 0v 1 a vds=20v, vgs= 0v, tj=55c 10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 1.0 1.5 3.0 v on state drain current id(on) vgs=10v, vds=5v 25 a 1 static drain-source on-resistance rds(on) vgs=10v, id= 7a 15 21 m 1 vgs =4. 5v, id =6 a 21 35 m forward transconductance gfs vds = 15v, id =5 a 24 s 1 diode forward voltage vsd if = 1a, vgs=0v 1.2 v 1 max.body-diode continuous current is 1.3 a pulsed current ism 2.5 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 1650 pf output capacitance coss 365 pf reverse transfer capacitance crss 170 pf switching parameters total gate charge qg vgs=5v, vds=15v, id=7a 18.0 25.0 nc 2 gate-source charge qgs 5.5 nc 2 gate-drain charge qgd 6.7 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rgen=6 11 20 ns 2 turn - on rise time tr 9 18 ns 2 turn - off delay time td(off) 25 40 ns 2 turn - off fall time tf 11 20 ns 2 body diode reverse recovery time trr if = 5a, dl/dt=100a/ s 15.5 ns body diode reverse recovery charge qrr 7.9 nc
3 4 - dual n-channel mosfet typical electrical and thermal characteristics ELM34810AA-N 3 jun-29-2004 dual n-channel enhancement mode field effect transistor p2103hvg sop-8 lead-free niko-sem
4 dual n-channel mosfet 4 - ELM34810AA-N 4 jun-29-2004 dual n-channel enhancement mode field effect transistor p2103hvg sop-8 lead-free niko-sem
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